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MSC0206W Datasheet, PDF (1/6 Pages) MORE Semiconductor Company Limited – 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET | |||
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MSC0206W
20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
General Features
â VDS =20V,ID =6A
RDS(ON) < 28m ⦠@ VGS=4.5V
RDS(ON) < 37m⦠@ VGS=2.5V
â High density cell design for ultra low Rdson
â Fully characterized avalanche voltage and current
Lead Free
Application
â Power switching application
â Hard switched and high frequency circuits
â Uninterruptible power supply
PIN Configuration
Marking and pin Assignment
SOP-8 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSC0206W
MSC0206W
SOP-8
Reel Size
Ã330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100â)
ID (100â)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Limit
20
±10
6
3.8
25
1.25
-55 To 150
Unit
V
V
A
A
A
W
â
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient(Note 2)
RθJA
100
â/W
MORE Semiconductor Company Limited
http://www.moresemi.com
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