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MSC0203S Datasheet, PDF (1/10 Pages) MORE Semiconductor Company Limited – N and P-Channel Enhancement Mode Power MOS FET | |||
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MSC0203S
N and P-Channel Enhancement Mode Power MOS FET
General Features
â N-Channel
VDS = 20V,ID = 3A
RDS(ON) < 65m⦠@ VGS=4.5V
RDS(ON) < 90m⦠@ VGS=2.5V
â P-Channel
VDS = -20V,ID = -3A
RDS(ON) < 110m⦠@ VGS=-4.5V
RDS(ON) < 140m⦠@ VGS=-2.5V
Lead Free
â High power and current handing capability
â Lead free product is acquired
â Surface mount package
pin Assignment
PIN Configuration
SOT-23-6L top view
N-channel
P-channel
Package Marking and Ordering Information
Device Marking
Device
MSC0203S
Device Package
SOT-23-6L
Reel Size
Ã180mm
Tape width
8mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25âunless otherwise noted)
Parameter
Symbol
N-Channel
Drain-Source Voltage
VDS
20
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
Maximum Power Dissipation
TA=25â
TA=70â
TA=25â
VGS
±12
3
ID
2.4
IDM
13
PD
0.8
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150
P-Channel
-20
±12
-3
-2.4
-13
0.8
-55 To 150
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note2)
Thermal Resistance,Junction-to-Ambient (Note2)
RθJA
RθJA
N-Ch
156
P-Ch
156
Unit
V
V
A
A
W
â
â /W
â /W
MORE Semiconductor Company Limited
http://www.moresemi.com
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