MSC0203S-SOT23 Datasheet, PDF (1/10 Pages) MORE Semiconductor Company Limited – N and P-Channel Enhancement Mode Power MOS FET

MSC0203S
N and P-Channel Enhancement Mode Power MOS FET
General Features
● N-Channel
V_DS = 20V,I_D = 3A
R_DS(ON) < 65mΩ @ V_GS=4.5V
R_DS(ON) < 90mΩ @ V_GS=2.5V
● P-Channel
V_DS = -20V,I_D = -3A
R_DS(ON) < 110mΩ @ V_GS=-4.5V
R_DS(ON) < 140mΩ @ V_GS=-2.5V
Lead Free
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
pin Assignment
PIN Configuration
SOT-23-6L top view
N-channel
P-channel
Package Marking and Ordering Information
Device Marking
Device
MSC0203S
Device Package
SOT-23-6L
Reel Size
Ø180mm
Tape width
8mm
Quantity
3000 units
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Parameter
Symbol
N-Channel
Drain-Source Voltage
V_DS
20
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ^{(Note 1)}
Maximum Power Dissipation
T_A=25℃
T_A=70℃
T_A=25℃
V_GS
±12
3
I_D
2.4
I_DM
13
P_D
0.8
Operating Junction and Storage Temperature Range
T_J,T_STG
-55 To 150
P-Channel
-20
±12
-3
-2.4
-13
0.8
-55 To 150
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient ^(Note2)
Thermal Resistance,Junction-to-Ambient ^(Note2)
R_θJA
R_θJA
N-Ch
156
P-Ch
156
Unit
V
V
A
A
W
℃
℃ /W
℃ /W
MORE Semiconductor Company Limited
http://www.moresemi.com
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