MBR2045CT Datasheet, PDF (1/2 Pages) ON Semiconductor – SWITCHMODE Power Rectifier

FEATURES
·Metal of silicon rectifier,majority carrier conducton
·Guard ring for transient protection
·Low power loss, high efficiency
·High current capability, low VF
·High surge capacity
·Plastic package has UL flammability
classification 94V-0
MBR2045CT
20A Schottky Barrier Rectifiers
TO-220 PACKAGE
MECHANICAL DATA
·Case :TO-220 molded plastic
·Polarity : As marked on the body
·Mounting position : Any
R^Ma^At^Xi^In^Mg^Us^M a^Rt^AT2^I5^N℃^GSam^Ab^Ni^Den^Et^LEt^Ce^Tm^Rp^Ie^Cr^Aa^Ltu^Cr^He^ARu^An^Cl^Te^Es^Rs^ISo^Tt^Ih^Ce^Srwise specified.
Single phase, half wave, 60HZ, resistive or inductive load.
For capacitive load, derate current by 20%
Lead Free
CHARACTERISTICS
SYMBOL
Maximum Recurrent Peak Reverse Voltage
VRRM
Maximum RMS Voltage
VRMS
Maximum DC Blocking Voltage
Vcc
Maximum Average Forward
Rectified Current
I(AV)
Peak Forward Surge Current
8.3ms single half sine-wave
IFSM
superimposed on rated load (JEDEC METHOD)
Maximum Forward Voltage at 10A DC VF
Maximum DC Reverse Current @TC=25℃
IR
at Rated DC Blocking Voltage @TC=125℃
Typical Junction Capacitance
CJ
Typical Thermal Resistance
Operating Temperature Range
R0JC
TJ
Storage Temperature Range
TSTG
MBR2045CT
45
31.5
45
20
200
0.65
0.15
50
350
2.5
-55to+175
-55to+175
UNIT
V
V
V
A
A
V
MA
pF
℃/W
℃
℃
MORE Semiconductor Company Limited
http://www.moresemi.com
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