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MBR10200FCT Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – SCHOTTKY BARRIER RECTIFIER
FEATURES
·Metal of silicon rectifier,majority carrier conducton
·Guard ring for transient protection
·Low power loss, high efficiency
·High current capability, low VF
·High surge capacity
·Plastic package has UL flammability
classification 94V-0
MBR10200FCT
10A Schottky Barrier Rectifiers
TO-220F PACKAGE
MECHANICAL DATA
·Case :TO-220F molded plastic
·Polarity : As marked on the body
·Mounting position : Any
RMaAtXiInMgUsM aRtAT2I5N℃GSamAbNiDenEtLEtCeTmRpIeCrAaLtuCrHeARuAnClTeEsRsISoTtIhCeSrwise specified.
Single phase, half wave, 60HZ, resistive or inductive load.
For capacitive load, derate current by 20%
Lead Free
CHARACTERISTICS
SYMBOL
Maximum Recurrent Peak Reverse Voltage
VRRM
Maximum RMS Voltage
VRMS
Maximum DC Blocking Voltage
Vcc
Average Rectifier Forward Current
Total Device (Rated VR) @TC=125℃
( per diode )
IF(AV)
Non-Repetitive Peak Surge Current (Surge applied at
rate load conditions halfware, single phase, 60Hz)
IFSM
Maximum Instantaneous Forward Voltage
Tc=25℃
IF=5A
VF
Tc=125℃
Instantaneous Reverse Current
Tc=25℃
AT VRM
IR
Tc=125℃
Typical Thermal Resistance
R0JC
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
MBR101200FCT
200
140
200
5
10
125
0.95
0.85
0.05
15
3.8
-55to+175
-55to+175
UNIT
V
V
V
A
A
V
MA
℃/W
℃
℃
MORE Semiconductor Company Limited
http://www.moresemi.com
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