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| CAS100H12AM1_13 Datasheet, PDF (1/11 Pages) Molex Electronics Ltd. – 1200V, 100A Silicon Carbide Half-Bridge Module | |||
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CAS100H12AM1
1.2 kV, 100A Silicon Carbide
Half-Bridge Module
Z-FETTM MOSFET and Z-RecTM Diode
Features
⢠Ultra Low Loss
⢠Zero Turn-off Tail Current from MOSFET
⢠Zero Reverse Recovery Current from Diode
⢠High-Frequency Operation
â¢
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Positive Temperature Coefficient on VF and VDS(on)
AlSiC Baseplate, AMB Si3N4 Substrate
System Benefits
⢠Enables Compact and Lightweight Systems
⢠High Efficiency Operation
⢠Ease of Transistor Gate Control
⢠Reduced Cooling Requirements
⢠Reduced System Cost
VDS 1.2 kV
RDS(on) (TJ = 25ËC)
16 mâ¦
EOFF (TJ = 125ËC)
1.8 mJ
Package
Applications
⢠High Power Converters
⢠Motor Drives
⢠Solar Inverters
⢠UPS and SMPS
⢠Induction Heating
Part Number
Package
Marking
CAS100H12AM1 Half-Bridge Module CAS100H12AM1
Maximum Ratings (TC = 25ËC unless otherwise specified)
Symbol
Parameter
Value
Unit
Test Conditions
Notes
VDS
Drain - Source Voltage
VGS
Gate - Source Voltage
ID
Continuous Drain Current
ID(pulse)
Pulsed Drain Current
1.2
-5/+20
168
117
400
kV
V
VGS = 20V, TC=25ËC
A
VGS = 20V, TC=90ËC
A Pulse width Limited by Tjmax,TC = 25ËC
TJ
TC ,TSTG
Visol
LStray
M
G
Junction Temperature
Case and Storage Temperature Range
Case Isolation Voltage
Stray Inductance
Mounting Torque
Weight
150
ËC
-55 to +125 ËC
6
20
2.94
150
kV AC, t=1min
nH Measured from D1 to S2
Nm
g Measured without fasteners
Clearance Distance
Creepage Distance
Pd
Power Dissipation
12.2
17.3
20.2
568
mm Terminal to terminal
mm Terminal to terminal
mm Terminal to base plate
W
Subject to change without notice.
www.cree.com
Fig. 25
Fig 24
1
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