IM801B Datasheet, PDF (1/9 Pages) MMD Components – MEMS Oscillator, Low Power, LVCMOS/HCMOS Compatible, 1.000 MHz to 110.000 MHz

MEMS Oscillator, Low Power, LVCMOS/HCMOS Compatible, 1.000 MHz to 110.000 MHz
IM801 Series
Features:
 MEMS Technology
 Direct pin to pin drop-in replacement for industry-standard packages
 LVCMOS/HCMOS Compatible Output
 Industry-standard package 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2 mm x mm
 Pb-free, Halogen-free, Antimony-free
 RoHS and REACH compliant
 Fast delivery times
Typical Applications:
 Fibre Channel
 Server and Storage
 GPON, EPON
 100M / 1G /10G Ethernet
Electrical Specifications:
Frequency Range
1.000 MHz to 110.000MHz
Frequency Stability
See Part Number Guide
Inclusive of Initial Tolerance, Operating Temperature Range, Load,
Voltage, and Aging
Operating Temperature
See Part Number Guide
Supply Voltage (Vdd) 10% See Part Number Guide
Current Consumption
3.8 mA typ./ 4.5 mA max
3.7 mA typ./ 4.2 mA max
3.5 mA typ./ 4.1 mA max
No load condition, F = 20 MHz, Vdd = +2.8 V to +3.3 V
No load condition, F = 20 MHz, Vdd = +2.5 V
No load condition, F = 20 MHz, Vdd = +1.8 V
OE Disable Current
4.2 mA max
4.0 mA max
Vdd = +2.5 V to +3.3 V, OE = GND, Output in high-Z state
Vdd = +1.8 V, OE = GND, Output in high-Z state
Standby Current
2.1 µA typ./ 4.3 µA max
1.1 µA typ. / 2.5 µA max
0.2 µA typ. / 1.3 µA max
ST = GND, Vdd = +2.8 V to +3.3V
ST = GND, Vdd = +2.5 V
ST = GND, Vdd = +1.8 V
Waveform Output
LVCMOS / HCMOS
Symmetry
45%/55%
50% of waveform all Vdds
Rise / Fall Time
1.0 nSec typ./ 2.0 nSec max
1.3 nSec typ./ 2.5 nSec max
Vdd = +2.5 V, +2.8 V, + 3.0 V or +3.3 V from 20% to 80% of waveform
Vdd = +1.8 V from 20% to 80% of waveform
Logic “1”
90% of Vdd min
Logic “0”
10% of Vdd max
Input High Voltage
70% of Vdd min
Pin 1, OE or ST
Input Low Voltage
30% of Vdd max
Pin 1, OE or ST
Input Pull-up Impedance
50kΩ min / 87kΩ typ. 150kΩ max
2.0MΩ min
Pin 1, OE logic high or logic low or ST logic high
Pin 1, ST logic Low
Startup Time
5.0 mSec max
Measured from the time Vdd reaches its rated min value
Enable/Disable time
130 nSec max
F = 110 Mhz. For other frequencies, T_oe =100 nSec = 3 cycles
Resume Time
5.0 mSec max
Measured from the time ST pin crosses 50% threshold
RMS Period Jitter
1.8pSec typ./ 3.0pSec max
1.8pSec typ./ 3.0pSec max.
F = 75 MHz, Vdd = +2.5 V, +2.8 V, + 3.0 V or +3.3 V
F = 75 MHz, Vdd = +1.8 V
Peak-to-peak Period Jitter
12.0 pSec typ./ 25.0 pSec max
14.0 pSec typ./ 30.0 pSec max
F = 75 MHz, Vdd = +2.5 V, +2.8 V, + 3.0 V or +3.3 V
F = 75 MHz, Vdd = +1.8 V
RMS Phase Jitter (random)
0.5pSec typ./ 0.9 pSec max
1.3pSec typ./ 2.0pSec max
F = 75 MHz, Integration Bandwidth = 900 kHz to 7.5 MHz
F = 75 MHz, Integration Bandwidth = 12 kHz to 20.0 MHz
Notes:
 All min and max limits are specified over temperature and rated operating voltage with 15pF output unless otherwise stated.
 Typical values are at +25ºC and nominal supply voltage.
Storage Temperature
Absolute Maximum Limits
Supply Voltage (Vdd)
Electrostatic Discharge
Solder Temperature (follow standard Pb free soldering guidelines)
Junction Temperature
-65ºC to +150ºC
-0.5 VDC to 4.0 VDC
2000 V max
260ºC max
150ºC max
ILSI America Phone [phone] ● Fax [phone] ●email: [e-mail] ●
www.ilsiamerica.com
Specifications subject to change without notice
Rev: 01/30/16_A
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