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PM150CSD120 Datasheet, PDF (8/8 Pages) Powerex Power Semiconductors – Intellimod™ Module Three Phase IGBT Inverter Output (150 Amperes/1200 Volts)
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DIODE FORWARD CHARACTERISTICS
(TYPICAL)
103
7
VD = 15V
Tj = 25°C
5
4
Tj = 125°C
3
2
102
7
5
4
3
2
101
0
0.5
1
1.5
2
2.5
EMITTER-COLLECTOR VOLTAGE VEC (V)
ID VS. fc CHARACTERISTICS
(TYPICAL)
120
VD = 15V
Tj = 25°C
100
N-side
80
60
40
P-side
20
0
0
5
10 15 20 25
CARRIER FREQUENCY fc (kHz)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi PART)
101
7
5
3
2
100
7
5
3
2
10–1
7
5
3
2
10–2
7
5
3 Single Pulse
2 Per unit base = Rth(j – c)F = 0.24°C/ W
10–3
10–32 3 5 710–22 3 5 710–12 3 5 7100 2 3 5 7101
TIME (s)
MITSUBISHI <INTELLIGENT POWER MODULES>
PM150CSD120
FLAT-BASE TYPE
INSULATED PACKAGE
DIODE REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
100
103
7
7
5
5
4
4
3
3
2
10–1
7
5
4
3
2
10–2
101
trr
2
Irr
trr
Irr
102
7
VCC = 600V
5
4
VD = 15V
3
Tj = 25°C
Tj = 125°C 2
Inductive load
101
2 3 4 5 7 102 2 3 4 5 7 103
COLLECTOR RECOVERY CURRENT –IC (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT PART)
101
7
5
3
2
100
7
5
3
2
10–1
7
5
3
2
10–2
7
5
3 Single Pulse
2 Per unit base = Rth(j – c)Q = 0.16°C/ W
10–3
10–32 3 5 710–22 3 5 710–12 3 5 7100 2 3 5 7101
TIME (s)
Jul. 2005