PM100RL1B060 Datasheet, PDF (8/9 Pages) Mitsubishi Electric Semiconductor – INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE

MITSUBISHI <INTELLIGENT POWER MODULES>
PM100RL1B060
FLAT-BASE TYPE
INSULATED PACKAGE
SWITCHING LOSS CHARACTERISTICS
(TYPICAL)
6.0
5.5
VCC = 300V
VD = 15V
Eon
5.0
Tj = 25°C
4.5
Tj = 125°C
4.0 ^{Inductive load}
3.5
3.0
2.5
Eoff
2.0
1.5
1.0
0.5
0
0 20 40 60 80 100 120
COLLECTOR CURRENT IC (A)
DIODE REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
1.0
50
VCC = 300V
0.9 _{VD = 15V}
45
0.8
Tj = 25°C
Tj = 125°C
0.7 _Inductive
0.6 ^load
40
35
Irr
30
0.5
25
0.4
trr ²⁰
0.3
15
0.2
10
0.1
5
0
0
0 20 40 60 80 100 120
COLLECTOR REVERSE CURRENT –IC (A)
SWITCHING RECOVERY LOSS CHARACTERISTICS
(TYPICAL)
3.0
VCC = 300V
VD = 15V
2.5
Tj = 25°C
Tj = 125°C
2.0 ^{Inductive load}
1.5
1.0
0.5
0
0 20 40 60 80 100 120
COLLECTOR REVERSE CURRENT –IC (A)
ID VS. fc CHARACTERISTICS
(TYPICAL)
45
VD = 15V
40
Tj = 25°C
35
Tj = 125°C
N-side
30
25
20
15
10
P-side
5
0
0
5
10 15 20 25
fc (kHz)
UV TRIP LEVEL VS. Tj CHARACTERISTICS
(TYPICAL)
20
UVt
18
UVr
16
14
12
10
8
6
4
2
0
–50
0
50
100
150
Tj (°C)
SC TRIP LEVEL VS. Tj CHARACTERISTICS
(TYPICAL)
2.0
VD = 15V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
–50
0
50
100
150
Tj (°C)
May 2009
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