CM150TX-24S Datasheet, PDF (8/10 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM150TX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
INVERTER PART
CAPACITANCE CHARACTERISTICS
(TYPICAL)
G-E short-circuited, T_j =25 °C
100
C_ies
10
1
C_oes
0.1
C_res
FREE WHEELING DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
V_CC=600 V, V_GE=±15 V, R_G=0 Ω, INDUCTIVE LOAD
---------------: T_j =150 °C, - - - - -: T_j =125 °C
1000
t_rr
100
I_rr
0.01
0.1
1
10
100
COLLECTOR-EMITTER VOLTAGE V_CE (V)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
V_CC=600 V, I_C=150 A, T_j=25 °C
20
15
10
5
10
10
100
1000
EMITTER CURRENT I_E (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
(MAXIMUM)
Single pulse, T_C=25 °C
R _{t h ( j - c ) Q} =0.13 K/W, R _{t h ( j - c ) D} =0.23 K/W
1
0.1
0.01
0
0
100
200
300
400
500
GATE CHARGE Q_G (nC)
Publication Date : September 2012
8
0.001
0.00001 0.0001 0.001
0.01
0.1
1
10
TIME (S)