PS21994-4 Datasheet, PDF (7/10 Pages) Mitsubishi Electric Semiconductor – Dual-In-Line Package Intelligent Power Module TRANSFER-MOLD TYPE INSULATED TYPE

MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21994-4/-4A/-4C/-4W
TRANSFER-MOLD TYPE
INSULATED TYPE
RECOMMENDED OPERATION CONDITIONS
Symbol
Parameter
Condition
Limits
Min. Typ.
VCC
Supply voltage
Applied between P-N
0
300
VD
Control supply voltage
Applied between VP1-VNC, VN1-VNC
13.5 15.0
VDB
Control supply voltage
Applied between VUFB-U, VVFB-V, VWFB-W
13.0 15.0
∆VD, ∆VDB Control supply variation
–1
—
tdead
Arm shoot-through blocking time For each input signal, TC ≤ 100°C
1.5
—
fPWM
PWM input frequency
TC ≤ 100°C, Tj ≤ 125°C
—
—
IO
Allowable rms current
VCC = 300V, VD = VDB = 15V,
fPWM = 5kHz
—
—
P.F = 0.8, sinusoidal PWM,
Tj ≤ 125°C, TC ≤ 100°C
(Note 8) ^{fPWM = 15kHz —}
—
PWIN(on) Allowable minimum input
PWIN(off) ^{pulse width}
0.5
—
(Note 9) 0.5
—
VNC
VNC variation
Between VNC-N (including surge)
–5.0
—
Note 8 : The allowable rms current value depends on the actual application conditions.
9 : IPM might not make response if the input signal pulse width is less than the recommended minimum value.
Max.
400
16.5
18.5
1
—
20
8.0
5.0
—
—
5.0
Unit
V
V
V
V/µs
µs
kHz
Arms
µs
V
Fig. 7 THE DIPIPM INTERNAL CIRCUIT
VUFB
HVIC
P
VP1
VCC
VUB
IGBT1
Di1
UP
UP
UOUT
VNC
COM
VUS
U
VVFB
VVB
IGBT2
Di2
VP
VP
VOUT
VVS
V
VWFB
WP
VN1
UN
VN
WN
Fo
VNC
VWB
WP
WOUT
VWS
LVIC
UOUT
VCC
UN
VN
WN
Fo
GND
VOUT
WOUT
CIN
VNO
IGBT3
Di3
IGBT4
Di4
IGBT5
Di5
IGBT6
Di6
CIN
7
W
N
Sep. 2008