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| MG400V1US51A Datasheet, PDF (7/7 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS | |||
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102
7
5
3
2
101
7
5
3
2
100
0
Edsw - RG
Common emitter
VCC = 900V
IC = 400A
VGE = ±15V
Tj = 25°C
Tj = 125°C
4
8
12
16
GATE RESISTANCE RG (â¦)
VCE, VGE - QG
1000
20
800
600
400
200
0
0
16
VCE =0V
12
900
8
300
600
Common emitter 4
RL = 2.25â¦
Tj = 25°C
0
500 1000 1500 2000 2500
CHARGE QG (nC)
Rth - tW
100
7 TC = 25°C
5
3
2
10-1
7
5
3
2
10-2
7
5
3
2
DIODE STAGE
TRANSISTOR STAGE
10-3
10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7100 2 3 5 7101
PULSE WIDTH tW (s)
MITSUBISHI IGBT MODULES
MG400V1US51A
HIGH POWER SWITCHING APPLICATIONS
MOTOR CONTROL APPLICATIONS
Edsw - IF
102
7
5
3
2
101
7
5
3
2
100
0
Common emitter
VCC = 900V
RG = 2â¦
VGE = ±15V
Tj = 25°C
Tj = 125°C
100
200
300
400
FORWARD CURRENT IF (A)
C - VCE
105
7
5
3
2
104
7
5
3
2
103
7
5
3 VGE = 0V
2 f = 1MHz
TC = 25°C
102
100 2 3 5 7 101
23
Cies
Coes
Cres
5 7 102
COLLECTOR-EMITTER VOLTAGE VCE (V)
Dec.2005
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