MF365A-LZCATXX Datasheet, PDF (7/16 Pages) Mitsubishi Electric Semiconductor – 8/16-bit Data Bus Static RAM Card

15. SWITCHING CHARACTERISTICS
Read Cycle (Ta=0~55°C, VCC=5V±5%, unless otherwise noted)
Symbol
Parameter
tcR
ta(A)
ta(CE)
ta(OE)
tdis(CE)
tdis(OE)
ten(CE)
ten(OE)
tV(A)
Read cycle time
Address access time
Card enable access time
Output enable access time
Output disable time (from CE#)
Output disable time (from OE#)
Output enable time (from CE#)
Output enable time (from OE#)
Data valid time (after address change)
16. TIMING REQUIREMENTS
Write Cycle (Ta=0~55°C, Vcc=5V±5%, unless otherwise noted)
Symbol
Parameter
tcW
tw(WE)
tsu(A)
tsu(A-WEH)
tsu(CE-WEH)
t(D-WEH)
th(D)
trec(WE)
tdis(WE)
tdis(OE)
ten(WE)
ten(OE)
tsu(OE-WE)
th(OE-WE)
Write cycle time
Write pulse width
Address set up time
Address set up time with respect to WE# high
Card enable set up time with respect to WE# high
Data set up time with respect to WE# high
Data hold time
Write recovery time
Output disable time (from WE#)
Output disable time (from OE#)
Output enable time (from WE#)
Output enable time (from OE#)
OE# set up time with respect to WE# low
OE# hold time with respect to WE# high
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
Limits
Unit
Min. Max.
150
ns
150 ns
150 ns
75 ns
75 ns
75 ns
5
ns
5
ns
0
ns
Limits
Unit
Min. Max.
150
ns
80
ns
20
ns
100
ns
100
ns
50
ns
20
ns
20
ns
75 ns
75 ns
5
ns
5
ns
10
ns
10
ns
MITSUBISHI
ELECTRIC
7/16
Apr. 1999 Rev. 1.1