CM200DX-24A Datasheet, PDF (7/7 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

MITSUBISHI IGBT MODULES
CM200DX-24A
HIGH POWER SWITCHING USE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
10³
7
5
tf
3
2 td(off)
10²
7
td(on)
5
3
tr
2
10¹
7
5
3
2
101⁰ _{00 2 3}
5 7 10¹
Conditions:
VCC = 600V
VGE = ±15V
IC = 200A
Tj = 125°C
Inductive load
2 3 5 7 10²
GATE RESISTANCE RG (Ω)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
10²
7
Eon
5
3
Eoff
2
10¹
7
Conditions:
5 _{VCC = 600V}
3 ^{VGE = ±15V}
2
IC, IE = 200A
Tj = 125°C
Inductive load
101⁰ _{00 2 3 5 7 101}
Err
23
5 7 10²
GATE RESISTANCE RG (Ω)
GATE CHARGE CHARACTERISTICS
(TYPICAL) Inverter part
20
IC = 200A
VCC = 400V
15
VCC = 600V
10
5
0
0 200 400 600 800 1000 1200 1400
GATE CHARGE QG (nC)
7
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
10²
7 ^Conditions:
VCC = 600V
5 _{VGE = ±15V}
3 ^{RG = 1.6Ω}
Tj = 125°C
2 _{Inductive load}
10¹
7
Eoff
5
3 Err
2
Eon
101⁰ _{01 2 3}
5 7 10²
23
5 7 10³
COLLECTOR CURRENT IC (A)
EMITTER CURRENT IE (A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE WHEELING DIODE
(TYPICAL) Inverter part
10³
7
5
3
2
Irr
10²
7
5
3
2
10¹
7
5
3
2
101⁰ ₀₁
23
5 7 10²
trr
Conditions:
VCC = 600V
VGE = ±15V
RG = 1.6Ω
Tj = 25°C
Inductive load
2 3 5 7 10³
EMITTER CURRENT IE (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
10⁰
7 Single pulse,
5 _{TC = 25°C}
3
2
10^–1
7
5
3
2
10^–2
7
5
3
2 ^{Inverter IGBT part : Per unit base = Rth(j–c) = 0.10K/W}
Inverter FWDi part : Per unit base = Rth(j–c) = 0.19K/W
10^–3
10^–52 3 5710^–42 3 5710^–32 3 5710^–22 3 5710^–12 3 5710⁰ 2 3 5710¹
TIME (s)
Jan. 2009