CM150RX-12A Datasheet, PDF (7/8 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

MITSUBISHI IGBT MODULES
CM150RX-12A
HIGH POWER SWITCHING USE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
10³
7
5
3
2
10²
7
5
3
2
101¹ ₀₀
tf
td(off)
td(on)
tr
2 3 5 7 10¹
Conditions:
VCC = 300V
VGE = ±15V
IC = 150A
Tj = 125°C
Inductive load
2 3 5 7 10²
GATE RESISTANCE RG (Ω)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
10²
7
5
3
2
Eon
10¹
7
5
3
2
Conditions:
10⁰
7
VCC = 300V
5 VGE = ±15V
3 ^{IC, IE = 150A}
2 Tj = 125°C
Inductive load
10^–₁¹ _{00 2 3 5 7 101}
Eoff
Err
2 3 5 7 10²
GATE RESISTANCE RG (Ω)
GATE CHARGE CHARACTERISTICS
(TYPICAL) Inverter part
20
IC = 150A
VCC = 200V
15
VCC = 300V
10
5
0
0 100 200 300 400 500 600
GATE CHARGE QG (nC)
7
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
10¹
7
Eoff
5
3
Eon
2
Err
10⁰
7
5
3
2
10^–₁¹ ₀₁
23
5 7 10²
Conditions:
VCC = 300V
VGE = ±15V
RG = 6.2Ω
Tj = 125°C
Inductive load
2 3 5 7 10³
COLLECTOR CURRENT IC (A)
EMITTER CURRENT IE (A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE WHEELING DIODE
(TYPICAL) Inverter part
10³
7 ^Conditions:
5
VCC = 300V
VGE = ±15V
3 RG = 6.2Ω
2 ^{Tj = 25°C}
Inductive load
Irr
10²
trr
7
5
3
2
101¹ _{01 2 3 5 7 102 2 3 5 7 103}
EMITTER CURRENT IE (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
10⁰
7 Single pulse
5 _{TC = 25°C}
3
2
10^–1
7
5
3
2
10^–2
7
5 Inverter IGBT part : Per unit base = Rth(j–c) = 0.24K/W
3 ^{Inverter FWDi part : Per unit base = Rth(j–c) = 0.46K/W}
2 Brake IGBT part : Per unit base = Rth(j–c) = 0.44K/W
10^{–3 Brake Clamp-Di part : Per unit base = Rth(j–c) = 0.85K/W}
10^–52 3 5710^–42 3 5710^–32 3 5710^–22 3 5710^–12 3 5710⁰ 2 3 5710¹
TIME (s)
Jan. 2009