CM150DUS-12F Datasheet, PDF (7/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CAPACITANCE CHARACTERISTICS
(TYPICAL)
G-E short-circuited, T_j =25 °C
100
C_ies
10
1
C_oes
C_res
0.1
0.1
1
10
100
COLLECTOR-EMITTER VOLTAGE V_CE (V)
MITSUBISHI IGBT MODULES
ç ^CM150DUS-12F
HIGH POWER SWITCHING USE
INSULATED TYPE
GATE CHARGE CHARACTERISTICS
(TYPICAL)
I_C=150 A, T _j =25 °C
20
18
V_CC=200 V
16
14
V_CC=300 V
12
10
8
6
4
2
0
0
200
400
600
800
1000
1200
1400
GATE CHARGE Q_G (nC)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
(MAXIMUM)
Single pulse, T_C'=25°C
1
0.1
0.01
0.001
0.00001 0.0001
0.001
0.01
0.1
1
10
R_th(j-c')Q=0.19 K/W, R_th(j-c')D=0.35 K/W
TIME (S)
7
February-2011