CM1200HC-50H_09 Datasheet, PDF (7/7 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HC-50H
HIGH POWER SWITCHING USE
INSULATED TYPE
3000
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
VCC ≤ 1700V, VGE = +/-15V
Tj = 125°C, RG(off) ≥ 1.6Ω
2500
2000
1500
1000
500
0
0 500 1000 1500 2000 2500 3000
COLLECTOR-EMITTER VOLTAGE (V)
3000
FREE-WHEEL DIODE REVERSE
RECOVERY SAFE OPERATING AREA
(RRSOA)
VCC ≤ 1700V, di/dt ≤ 4000A/µs
Tj = 125°C
2500
2000
1500
1000
500
0
0 500 1000 1500 2000 2500 3000
EMITTER-COLLECTOR VOLTAGE (V)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005