RD30HUF1 Datasheet, PDF (6/7 Pages) Mitsubishi Electric Semiconductor – Silicon MOSFET Power Transistor,520MHz,30W

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD30HUF1
Silicon MOSFET Power Transistor,520MHz,30W
RD30HUF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA)
Freq.
[MHz]
100
150
200
250
300
350
400
450
500
520
550
S11
(mag) (ang)
0.870 -173.4
0.880 -177.3
0.890 -179.5
0.902 178.2
0.911 176.0
0.921 174.1
0.930 172.1
0.931 170.0
0.941 168.0
0.946 167.1
0.946 166.3
S21
(mag) (ang)
0.016
-8.8
0.015 -18.0
0.013 -23.7
0.011 -27.9
0.010 -31.1
0.008 -31.3
0.007 -29.2
0.005 -21.8
0.004
-9.5
0.004
-3.9
0.004
7.5
S12
(mag) (ang)
7.566 74.2
4.825 63.2
3.398 55.1
2.568 47.0
1.982 40.2
1.588 34.5
1.299 29.0
1.070 23.9
0.907 20.3
0.852 18.7
0.780 15.9
S22
(mag) (ang)
0.723 -170.2
0.748 -172.5
0.778 -173.9
0.817 -175.6
0.832 -177.6
0.857 -179.7
0.879 178.3
0.887 176.3
0.901 174.2
0.908 173.4
0.913 172.3
600
0.947 164.2 0.004
28.3
0.673
12.5
0.916 170.5
650
0.951 162.5 0.004
46.8
0.589
10.1
0.928 168.6
700
0.957 160.7 0.006
53.0
0.522
6.6
0.932 166.7
750
0.960 159.1 0.007
56.5
0.464
4.1
0.936 164.9
800
0.962 157.6 0.007
63.6
0.419
2.2
0.942 163.1
850
0.962 155.8 0.009
64.1
0.383
-1.2
0.945 161.6
900
0.962 154.2 0.009
63.5
0.341
-3.0
0.946 160.0
950
0.961 152.7 0.010
65.6
0.318
-4.2
0.952 158.2
1000 0.961 151.2 0.012
65.3
0.296
-7.4
0.955 157.0
1050 0.965 149.6 0.012
64.6
0.270
-8.3
0.955 155.4
1100 0.964 148.2 0.014
64.8
0.259
-9.4
0.957 153.6
RD30HUF1
MITSUBISHI ELECTRIC
6/7
REV.1 14 MAY. 2003