RA45H8994M1_10 Datasheet, PDF (6/9 Pages) Mitsubishi Electric Semiconductor – 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TEST BLOCK DIAGRAM
Silicon RF Power Semiconductors
RoHS COMPLIANCE RA45H8994M1
-
+
DC Pow er
Supply V_GG1
Pow er
Meter
R1 C1
DUT
5
12
34
Spectrum
Analyzer
Z_G=50Ω
Signal
Pre-
Directional
Attenuator
Attenuator
Generator
amplif ier
Coupler
C2
C3
C4
Z_L=50Ω
Directional
Pow er
Coupler
Attenuator _Meter
V^A_GG1

^-
+
DC Pow er
Supply V_GG2
+
-
DC Pow er
Supply V_DD
C1: 4700pF, C2: 1000pF, R1: suitable. Please refer the detail below.
C3, C4: 4700pF, 22uF in parallel
V_GG1=3.4V
EQUIVALENT CIRCUIT
3
1 RF Input added Gate Voltage 1(P_in & V_GG1)
2 Gate Voltage 2(V_GG2)
3 Drain Voltage (V_DD)
4 RF Output (P_out)
5 RF Ground (Case)
4
1
5
2
NOTE: Resistance between Gate Voltage 1, where RF is input, and ground equals to 15k ohm.

External resistance connected to V_GG1; impedance between Pin&V_GG1 and ground needs to make high impedance
that doesn't prevent RF characteristic on this module.
RA45H8994M1


25 Jun 2010
6/9