QM75E3Y-H Datasheet, PDF (6/6 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

PERFORMANCE CURVES (Diode part (D2))
MAXIMUM FORWARD CHARACTERISTIC
10 ³
7
5
3 Tj=25°C
2
10 ²
7
5
3
2
10 ¹
7
5
3
2
10 ⁰
0.6 1.0 1.4 1.8 2.2
FORWARD VOLTAGE VF (V)
MAXIMUM SURGE CURRENT
2000
1800
1600
1400
1200
1000
800
600
400
200
0
10 ⁰ 2 3 4 5 7 10 ¹
2 3 4 5 7 10 ²
CONDUCTION TIME (CYCLES AT 60Hz)
REVERSE RECOVERY CHARACTERISTICS
(VS. di/dt) (TYPICAL)
10 ²
7 VR=300V
5 _IF=75A
3
Tj=25°C
2
Tj=150°C
10 ²
Irr
Qrr
10 ¹
10 ¹
7
5
3
2
10 ⁰
10 ⁰
7
5
trr
3
2
10 ^–1
10 ^–1
10 ⁰ 2 3 4 5 7 10 ¹ 2 3 4 5 7 10 ² 2 3 4 5 7 10 ³
di/dt (A/µs)
MITSUBISHI TRANSISTOR MODULES
QM75E2Y/E3Y-H
HIGH POWER SWITCHING USE
INSULATED TYPE
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC
10 ⁰ 2 3 4 5 710 ¹ 2 3 4 5 7
1.0
0.8
0.6
0.4
0.2
0
10 ^–3 2 3 4 5 710 ^–22 3 4 5 7 10 ^–12 3 4 5 7 10 ⁰
TIME (s)
REVERSE RECOVERY CHARACTERISTICS
(VS. IF) (TYPICAL)
10 ²
7 VR=300V
5 di/dt=–150A/µs
3
Tj=25°C
2
Tj=150°C
10 ¹
7
5
10 ²
Irr
Qrr
10 ¹
3
2
10 ⁰
10 ⁰
7
trr
5
3
2
10 ^–1
10 ^–1
10 ⁰ 2 3 4 5 7 10 ¹ 2 3 4 5 7 10 ² 2 3 4 5 7 10 ³
FORWARD CURRENT IF (A)
Feb.1999