PS21963-4ES_09 Datasheet, PDF (6/8 Pages) Mitsubishi Electric Semiconductor – Dual-In-Line Package Intelligent Power Module

MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21963-4ES
TRANSFER-MOLD TYPE
INSULATED TYPE
Fig. 3 TIMING CHART OF THE DIP-IPM PROTECTIVE FUNCTIONS
[A] Short-Circuit Protection (Lower-side only with the external shunt resistor and CR filter)
a1. Normal operation : IGBT ON and carrying current.
a2. Short circuit detection (SC trigger).
a3. IGBT gate hard interruption.
a4. IGBT turns OFF.
a5. FO outputs (tFO(min) = 20µs).
a6. Input “L” : IGBT OFF.
a7. Input “H” : IGBT ON.
a8. IGBT OFF in spite of input “H”.
Lower-side control
input
Protection circuit state
a6 a7
SET
RESET
Internal IGBT gate
Output current Ic
Sense voltage of the
shunt resistor
Error output Fo
a3
a2
SC
a1
a4
a8
SC reference voltage
CR circuit time
constant DELAY
a5
[B] Under-Voltage Protection (Lower-side, UVD)
b1. Control supply voltage rising : After the voltage level reaches UVDr, the circuits start to operate when next input is applied.
b2. Normal operation : IGBT ON and carrying current.
b3. Under voltage trip (UVDt).
b4. IGBT OFF in spite of control input condition.
b5. FO outputs (tFO ≥ 20µs and FO outputs continuously during UV period).
b6. Under voltage reset (UVDr).
b7. Normal operation : IGBT ON and carrying current.
Control input
Protection circuit state
RESET
SET
UVDr
Control supply voltage VD
b1
UVDt
b3
RESET
b6
Output current Ic
b2
b4
b7
Error output Fo
b5
Mar. 2007
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