CM600HX-24A Datasheet, PDF (6/6 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

MITSUBISHI IGBT MODULES
CM600HX-24A
HIGH POWER SWITCHING USE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
10⁴
7 ^Conditions:
VCC = 600V
5 _{VGE = ±15V}
3 IC = 600A
2 ^{Tj = 125°C}
Inductive load
td(off)
10³
td(on)
7
tr
5
3
tf
2
101² _{00 2 3 5 7 101 2 3 5 7 102}
GATE RESISTANCE RG (Ω)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
10³
7
5
Eon
3
2
10²
7
5
3
2
10¹
7
5
3
2
10⁰₁₀₀
23
Eoff
Err
5 7 10¹
Conditions:
VCC = 600V
VGE = ±15V
IC, IE = 600A
Tj = 125°C
Inductive load
2 3 5 7 10²
GATE RESISTANCE RG (Ω)
GATE CHARGE CHARACTERISTICS
(TYPICAL) Inverter part
20
IC = 600A
VCC = 400V
15
VCC = 600V
10
5
0
0 500 1000 1500 2000 2500 3000 3500 4000 4500
GATE CHARGE QG (nC)
6
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
10²
7
5
3
Err
2
Eoff
10¹
7
5
3
2
101⁰ ₀₁
Eon
23
5 7 10²
Conditions:
VCC = 600V
VGE = ±15V
RG = 1.0Ω
Tj = 125°C
Inductive load
2 3 5 7 10³
COLLECTOR CURRENT IC (A)
EMITTER CURRENT IE (A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE WHEELING DIODE
(TYPICAL) Inverter part
10³
7
5
3
2
Irr
10²
trr
7
5
3
2
10¹
7
5
3
2
101⁰ ₀₁
23
5 7 10²
Conditions:
VCC = 600V
VGE = ±15V
RG = 1.0Ω
Tj = 25°C
Inductive load
2 3 5 7 10³
EMITTER CURRENT IE (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
10⁰
7 Single pulse,
5 _{TC = 25°C}
3
2
10^–1
7
5
3
2
10^–2
7
5
3
2 ^{Inverter IGBT part : Per unit base = Rth(j–c) = 0.033K/W}
Inverter FWDi part : Per unit base = Rth(j–c) = 0.048K/W
10^–3
10^–52 3 5710^–42 3 5710^–32 3 5710^–22 3 5710^–12 3 5710⁰ 2 3 5710¹
TIME (s)
Jan. 2009