CM150DX-24A Datasheet, PDF (6/7 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL) Inverter part
300
VGE =
15
20V
250
Tj = 25°C
13
200
12
150
11
100
50
10
9
0
0 1 2 3 4 5 6 7 8 9 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL) Inverter part
10
Tj = 25°C
8
6
4
IC = 300A
2
IC = 150A
IC = 60A
0
6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE VGE (V)
CAPACITANCE CHARACTERISTICS
(TYPICAL) Inverter part
10²
7
5
3
2
Cies
10¹
7
5
3
Coes
2
10⁰
7
5
3
2
VGE = 0V
10^–₁¹ _{0–1 2 3 5 7 100 2 3}
Cres
5 7 10¹ 2 3 5 7 10²
COLLECTOR-EMITTER VOLTAGE VCE (V)
6
MITSUBISHI IGBT MODULES
CM150DX-24A
HIGH POWER SWITCHING USE
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL) Inverter part
4
VGE = 15V
3.5
3
2.5
2
1.5
1
0.5
0
0
Tj = 25°C
Tj = 125°C
50 100 150 200 250 300
COLLECTOR CURRENT IC (A)
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL) Inverter part
10³
7
5
3
2
10²
7
5
3
2
Tj = 25°C
Tj = 125°C
10¹
0 0.5 1 1.5 2 2.5 3 3.5 4
EMITTER-COLLECTOR VOLTAGE VEC (V)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
10³
7
5
3
tf
2
td(off)
10²
7
5
3
2
10¹
7
5
3
2
10⁰₁₀₁
23
td(on)
tr
5 7 10²
Conditions:
VCC = 600V
VGE = ±15V
RG = 2.2Ω
Tj = 125°C
Inductive load
2 3 5 7 10³
COLLECTOR CURRENT IC (A)
Jan. 2009