CM1200DB-34N Datasheet, PDF (6/6 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200DB-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
10¹
7 VCC = 850V, VGE = ±15V
5 ^{RG(on) = 1.3Ω, RG(off) = 3.3Ω}
Tj = 125°C, Inductive load
3
2
td(off)
10⁰
7
td(on)
tr
5
tf
3
2
10^-1
7
5
3
2
10^-₁² ₀₂
2 3 5 7 10³
2 3 5 7 10⁴
COLLECTOR CURRENT (A)
FREE-WHEEL DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
500
VCC = 850V, VGE = ±15V
RG(on) = 1.3Ω
Tj = 125°C, Inductive load
400
Qrr
300
200
100
0
0 400 800 1200 1600 2000 2400
EMITTER CURRENT (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
1.2
Single Pulse, TC = 25°C
Rth(j–c)Q = 18K/kW
1.0 ^{Rth(j–c)R = 40K/kW}
0.8
0.6
0.4
0.2
010_{-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101}
TIME (s)
3000
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
VCC ≤ 1200V, VGE = +/-15V
Tj = 125°C, RG(off) ≥ 3.3Ω
2500
2000
1500
1000
500
0
0
Module
Chip
500
1000
1500
2000
COLLECTOR-EMITTER VOLTAGE (V)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005