CM100RL-12NF_09 Datasheet, PDF (6/6 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
IC = 100A
VCC = 200V
16
VCC = 300V
12
8
4
0
0 100 200 300 400 500 600
GATE CHARGE QG (nC)
MITSUBISHI IGBT MODULES
CM100RL-12NF
HIGH POWER SWITCHING USE
Feb. 2009
6