QM75TF-HB Datasheet, PDF (5/5 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI TRANSISTOR MODULES
QM75TF-HB
HIGH POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
800
700
600
500
400
300
200
100
0
10 ⁰ 2 3 4 5 7 10 ¹ 2 3 4 5 7 10 ²
CONDUCTION TIME (CYCLES AT 60Hz)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
10 ⁰ 2 3 4 5 7 10 ¹ 2 3 4 5 7
2.0
1.6
1.2
0.8
0.4
0
10 ^–3 2 3 4 5 710 ^–2 2 3 4 5 710 ^–1 2 3 4 5 7 10 ⁰
TIME (s)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
10 ²
7
Tj=25°C
5
Tj=125°C
3
2
10 ²
Irr
10 ¹
Qrr
10 ¹
7
5
3
2
10 ⁰
10 ⁰
7
5
trr
3
VCC=300V
2
IB1=150mA
10 ^–1
IB2=–1.5A _{10 –1}
10 ⁰ 2 3 4 5 710 ¹ 2 3 4 5 7 10 ² 2 3 4 5 7 10 ³
FORWARD CURRENT IF (A)
Feb.1999