QM50TX-HB Datasheet, PDF (5/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER SWITCHING USE INSULATED TYPE

MITSUBISHI TRANSISTOR MODULES
QM50TX-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
500
400
300
200
100
0
10 ⁰ 2 3 4 5 7 10 ¹ 2 3 4 5 7 10 ²
CONDUCTION TIME (CYCLES AT 60Hz)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE PART)
10 ⁰ 2 3 5 7 10 ¹ 2 3 5 7
2.0
1.6
1.2
0.8
0.4
0
10 ^–3 2 3 5 710 ^–22 3 5 710 ^–1 2 3 5 7 10 ⁰
TIME (s)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
10 ²
7
5
3
2
10 ¹ _Irr
7
5
3
2 _Qrr
10 ⁰
7
5
3 ^trr
2
10 ^–1
10 ⁰ 2 3
5 7 10 ¹ 2 3
10 ²
10 ¹
VCC=300V
IB1=100mA
IB2=–1.0A ₁₀ 0
Tj=25°C
Tj=125°C _{10 –1}
5 7 10 ² 2 3 5 7 10 ³
FORWARD CURRENT IF (A)
Feb.1999