 English |
|
|
|
|
|
|
|
| QM300HA-HB Datasheet, PDF (5/5 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE | |||
| |||
| ◁ |
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
3200
2400
1600
800
0
10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2
CONDUCTION TIME (CYCLES AT 60Hz)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
10 0 2 3 5 7 10 1 2 3 5 7
0.40
0.32
0.24
0.16
0.08
0
10 â3 2 3 5 7 10 â2 2 3 5 710 â12 3 5 7 10 0
TIME (s)
MITSUBISHI TRANSISTOR MODULES
QM300HA-HB
HIGH POWER SWITCHING USE
INSULATED TYPE
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
10 3
10 2
7 VCC=300V
5 IB1=0.6A
3 IB2= â6A
2
Tj=25°C
10 2
Tj=125°C
Irr
10 1
7
5
3
2
Qrr
10 1
7
5
3
2
10 0
10 0 2 3
5 7 10 1 2 3
trr
5 7 10 2 2 3
10 0
10 â1
5 7 10 3
FORWARD CURRENT IF (A)
Feb.1999
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese