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| QM150DY-2HBK Datasheet, PDF (5/5 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE | |||
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RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
1500
1000
500
0
10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2
CONDUCTION TIME (CYCLES AT 60Hz)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
10 0 2 3 4 5 710 1 2 3 4 5
1.0
0.8
0.6
0.4
0.2
0
10 â3 2 3 4 5 710 â2 2 3 4 5 710 â1 2 3 4 5 7 10 0
TIME (s)
MITSUBISHI TRANSISTOR MODULES
QM150DY-2HBK
HIGH POWER SWITCHING USE
INSULATED TYPE
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
10 3
10 2
7
5
3
2
Irr
10 2
10 1
7
5
Qrr
3
2
10 1
7 VCC=600V
5 IB1=0.3A
10 0
trr
3 IB2=â3A
2
Tj=25°C
10 0
Tj=125°C
10 â1
10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3
FORWARD CURRENT IF (A)
Feb.1999
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