PM400DSA060_00 Datasheet, PDF (5/6 Pages) Mitsubishi Electric Semiconductor – INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE

MITSUBISHI INTELLIGENT POWER MODULES
PM400DSA060
FLAT-BASE TYPE
INSULATED PACKAGE
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
5
V_D = 15V
4
V_CIN
= 0V
T_j =
25^oC
T_j = 125^oC
3
2
1
0
0 100 300 500 700 900
COLLECTOR CURRENT, I_C, (AMPERES)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
10¹
V_CC = 300V
V_D = 15V
Inductive Load
T_j = 25^oC
T_j = 125^oC
t_off
t_on
10⁰
10^-1
10¹
10²
COLLECTOR CURRENT, I_C, (AMPERES)
10³
DIODE FORWARD CHARACTERISTICS
10³
V_D = 15V
V_CIN
= 5V
T_j = 25^oC
T_j = 125^oC
10²
10¹
10⁰
0
0.5 1.0 1.5 2.0 2.5 3.0
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS (TYPICAL)
6
I_C = 400A
5
V_CIN = 0V
T_j = 25^oC
T_j = 125^oC
4
3
2
1
0
0
12 14 16 18 20
SUPPLY VOLTAGE, V_D, (VOLTS)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
10¹
V_CC = 300V
V_D = 15V
Inductive Load
T_j = 25^oC
T_j = 125^oC
10⁰
t_c(off)
t_c(on)
t_c(off)
10^-1
10¹
t_c(on)
10²
COLLECTOR CURRENT, I_C, (AMPERES)
10³
OVER CURRENT TRIP LEVEL VS.
SUPPLY VOLTAGE (TYPICAL)
120
T_j = 25^oC
100
80
60
40
0
0
13
15
17 19
21
SUPPLY VOLTAGE, V_D, (VOLTS)
1000
800
OUTPUT CHARACTERISTICS
(TYPICAL)
T_j = 25^oC
V_CIN = 0V
15
600
V_D = 17V
13
400
200
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
REVERSE RECOVERY CURRENT VS.
COLLECTOR CURRENT (TYPICAL)
10⁰
10³
V_CC = 300V
V_D = 15V
Inductive Load
T_j = 25^oC
T_j = 125^oC
t_rr
10^-1
10²
I_rr
10^-2
10¹
10¹
10²
10³
COLLECTOR REVERSE CURRENT, -I_C, (AMPERES)
OVER CURRENT TRIP LEVEL VS.
TEMPERATURE (TYPICAL)
140
120
100
80
60
V_D = 15V
0
0
40
80 120 160
JUNCTION TEMPERATURE, T_C, (^oC)
Sep.2000