PM150CVA120 Datasheet, PDF (5/6 Pages) Mitsubishi Electric Semiconductor – FLAT-BASE TYPE INSULATED PACKAGE

MITSUBISHI INTELLIGENT POWER MODULES
PM150CVA120
FLAT-BASE TYPE
INSULATED PACKAGE
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
3.0
2.0
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
3.0
2.0
OUTPUT CHARACTERISTICS
(TYPICAL)
150
T_j = 25^oC
V_CIN = 0V
15
V_D = 17V
100
13
1.0
0
0
V_D = 15V
V_CIN = 0V
T_j = 25°C
T_j = 125°C
100
200
300
COLLECTOR CURRENT, I_C, (AMPERES)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
10¹
t_off
10⁰
t_on
10^-1
10¹
V_CC = 600V
V_D = 15V
Inductive Load
T_j = 25°C
T_j = 125°C
10²
10³
COLLECTOR CURRENT, I_C, (AMPERES)
REVERSE RECOVERY CURRENT VS.
COLLECTOR CURRENT (TYPICAL)
10⁰
10³
I_rr
t_rr
10^-1
I_rr
10²
t_rr
10^-2
10¹
V_CC = 600V
V_D = 15V
Inductive Load
T_j = 25°C
T_j = 125°C ₁₀₁
10²
10³
COLLECTOR CURRENT, I_C, (AMPERES)
1.0
0
0
I_C = 150A
V_CIN = 0V
T_j = 25°C
T_j = 125°C
13
15
17
CONTROL SUPPLY VOLTAGE, V_D, (VOLTS)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
10¹
V_CC = 600V
V_D = 15V
Inductive Load
T_j = 25°C
T_j = 125°C
10⁰
t_c(off)
t_c(on)
10^-1
10¹
10²
10³
COLLECTOR CURRENT, I_C, (AMPERES)
DIODE FORWARD CHARACTERISTICS
10³
V_D = 15V
V_CIN = 15V
T_j = 25°C
T_j = 125°C
10²
10¹
0
1.0
2.0
3.0
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
50
0
0
10
20
30
COLLECTOR-EMITTER VOLTAGE, V_CE(sat), (VOLTS)
SWITCHING LOSS
CHARACTERISTICS (TYPICAL)
10² _{VCC = 600V}
V_D = 15V
Inductive Load
T_j = 25°C
10¹
T_j = 125°C
P_SW(off)
P_SW(on)
P_SW(off)
10⁰
10^-1
10¹
10²
10³
COLLECTOR CURRENT, I_C, (AMPERES)
CIRCUIT CURRENT VS.
CARRIER FREQUENCY
150
V_D = 15V
T_j = 25°C
N-SIDE
100
50
P-SIDE
0
0
10
20
30
CARRIER FREQUENCY, f_C, (kHz)
Sep.1998