CM500HA-34A Datasheet, PDF (5/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
T _j =25 °C
1000
V_GE=20 V
13 V
12 V
15 V
800
600
11 V
400
10 V
200
9V
8V
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE V_CE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
T _j =25 °C
10
8
I_C=1000 A
I_C=500 A
6
I_C=200 A
4
2
0
5
10
15
20
GATE-EMITTER VOLTAGE V_GE (V)
MITSUBISHI IGBT MODULES
CM500HA-34A
HIGH POWER SWITCHING USE
INSULATED TYPE
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
V_GE=15 V
4
T _j =125 °C
3
2
T _j =25 °C
1
0
0
200
400
600
800
1000
COLLECTOR CURRENT I_C (A)
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
G-E short-circuited
1000
T _j =125 °C
T _j =25 °C
100
10
0.5
1.5
2.5
3.5
EMITTER-COLLECTOR VOLTAGE V_EC (V)
5
July-2010
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