CM2400HC-34N Datasheet, PDF (5/6 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM2400HC-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
CAPACITANCE CHARACTERISTICS
(TYPICAL)
10³
7
5
Cies
3
2
10²
7
5
3
2
10¹
7
5
3
2 _{VGE = 0V, Tj = 25°C}
f = 100kHz
101⁰_{0-1 2 3 5 7100 2 3}
5 710¹
Coes
Cres
2 3 5 710²
COLLECTOR-EMITTER VOLTAGE (V)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
VCC = 850V, IC = 2400A
Tj = 25°C
16
12
8
4
0
0
4
8
12
16
20
GATE CHARGE (µC)
2400
2000
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
VCC = 850V, VGE = ±15V
RG(on) = 0.7Ω, RG(off) = 1.6Ω
Tj = 125°C, Inductive load
Eoff
1600
Eon
1200
800
Erec
400
0
0 800 1600 2400 3200 4000 4800
COLLECTOR CURRENT (A)
3000
2500
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
VCC = 850V, IC = 2400A
Eon
VGE = ±15V
Tj = 125°C, Inductive load
2000
Eoff
1500
1000
500
0
0
2
4
6
GATE RESISTANCE (Ω)
Erec
8
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005