CM2400HC-34H_05 Datasheet, PDF (5/6 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM2400HC-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
CAPACITANCE CHARACTERISTICS
(TYPICAL)
10³
7
5
3
Cies
2
10²
7
5
3
2
Coes
10¹
7
Cres
5
3
2 _{VGE = 0V, Tj = 25°C}
f = 100kHz
101⁰_{0-1 2 3 5 7100 2 3 5 7101 2 3 5 7102}
COLLECTOR-EMITTER VOLTAGE (V)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
VCC = 850V, IC = 2400A
Tj = 25°C
16
12
8
4
0
0
5
10
15
20
25
GATE CHARGE (µC)
2500
2000
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
VCC = 850V, VGE = ±15V
RG(on) = RG(off) = 0.27Ω
Tj = 125°C, Inductive load
Eon
1500
Eoff
1000
500
Erec
0
0 800 1600 2400 3200 4000 4800
COLLECTOR CURRENT (A)
5000
4000
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
VCC = 850V, IC = 2400A
VGE = ±15V
Tj = 125°C, Inductive load
Eon
3000
Eoff
2000
1000
0
Erec
0
0.5
1
1.5
2
2.5
3
GATE RESISTANCE (Ω)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005