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CM200TL-24NF Datasheet, PDF (5/5 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
IC = 200A
VCC = 400V
16
VCC = 600V
12
8
4
0
0 200 400 600 800 1000 1200 1400
GATE CHARGE QG (nC)
MITSUBISHI IGBT MODULES
CM200TL-24NF
HIGH POWER SWITCHING USE
Feb. 2009
5