CM200DY-34A Datasheet, PDF (5/5 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING US

GATE CHARGE
CHARACTERISTICS
20
IC = 200A
VCC = 800V
16
VCC = 1000V
12
8
4
0
0
500 1000 1500 2000
GATE CHARGE QG (nC)
MITSUBISHI IGBT MODULES
CM200DY-34A
HIGH POWER SWITCHING USE
Jun. 2007
5