|
CM150RL-24NF Datasheet, PDF (5/6 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE | |||
|
◁ |
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
103
7
5
3
2
102
7
5
3
2
101
101
23
Irr
trr
Conditions:
VCC = 600V
VGE = ±15V
RG = 2.1â¦
Tj = 25°C
Inductive load
5 7 102 2 3 5 7 103
EMITTER CURRENT IE (A)
SWITCHING LOSS vs.
COLLECTOR CURRENT
(TYPICAL)
102
Conditions:
7 VCC = 600V
5 VGE = ±15V
3 RG = 2.1â¦
Tj = 125°C
2 Inductive load
C snubber at bus
101
Esw(off)
7
Esw(on)
5
3
2
100
101 2 3 5 7 102 2 3 5 7 103
COLLECTOR CURRENT IC (A)
102
7
5
3
2
101
7
5
3
2
100
101
RECOVERY LOSS vs. IE
(TYPICAL)
Err
23
Conditions:
VCC = 600V
VGE = ±15V
RG = 2.1â¦
Tj = 125°C
Inductive load
C snubber at bus
5 7 102 2 3 5 7 103
EMITTER CURRENT IE (A)
5
MITSUBISHI IGBT MODULES
CM150RL-24NF
HIGH POWER SWITCHING USE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
10â32 3 5 710â22 3 5 710â12 3 5 7100 2 3 5 7 101
100
7
Single Pulse,
5
TC = 25°C
3
Under the chip
2
10â1
7
5
3
2
IGBT part:
10â2 Per unit base =
7
5
Rth(jâc) = 0.14K/W
FWDi part:
3
2
Per unit base =
Rth(jâc) = 0.23K/W
10â3
10â1
7
5
3
2
10â2
7
5
3
2
10â3
10â52 3 5 710â42 3 5 710â3
TIME (s)
SWITCHING LOSS vs.
GATE RESISTANCE
(TYPICAL)
102
7
Esw(on)
5
3
2
Esw(off)
101
7
5
3
2
100
100
23
Conditions:
VCC = 600V
VGE = ±15V
IC = 150A
Tj = 125°C
Inductive load
C snubber at bus
5 7 101 2 3 5 7 102
GATE RESISTANCE RG (â¦)
RECOVERY LOSS vs.
GATE RESISTANCE
(TYPICAL)
102
7
Conditions:
VCC = 600V
5
VGE = ±15V
3
IE = 150A
2
Tj = 125°C
Inductive load
C snubber at bus
101
7
Err
5
3
2
1010 00 2 3 5 7 101 2 3 5 7 102
GATE RESISTANCE RG (â¦)
Feb. 2009
|
▷ |