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CM10MD1-12H Datasheet, PDF (5/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE
◁
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103
7
5
tf
3
2
td(off)
102
7 td(on)
5
3 tr
2
101
100 2 3
5 7 101
VCC = 300V
VGE = ±15V
RG = 63Ω
Tj = 125°C
2 3 5 7 102
COLLECTOR CURRENT IC (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part)
10–32 3 5 710–22 3 5 710–12 3 5 7100 2 3 5 7 101
101
7
5
Single Pulse
3 Tf = 25°C
2 Rth(j – f) = 3.5°C/ W
100
7
5
3
3
2
2
10–1
7
5
10–1
7
5
3
3
2
2
10–2
7
5
10–2
7
5
3
2
10–3
3
2
10–3
10–52 3 5 710–42 3 5 710–3
TIME (s)
VGE – GATE CHARGE
(TYPICAL)
20
IC = 10A
18
16
VCC = 200V
14
VCC = 300V
12
10
8
6
4
2
0
0
10 20 30 40 50
GATE CHARGE QG (nC)
MITSUBISHI IGBT MODULES
CM10MD1-12H
MEDIUM POWER SWITCHING USE
FLAT-BASE TYPE, INSULATED TYPE
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
103
101
– di/dt = 20A / µs
7 Tj = 25°C
7
5
5
3
3
2
2
102
trr 100
7
7
5
Irr 5
3
3
2
2
101
10–1
10–1 2 3 5 7 100 2 3 5 7 101
EMITTER CURRENT IE (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
10–32 3 5 710–22 3 5 710–12 3 5 7100 2 3 5 7 101
101
7
5
Single Pulse
3 Tf = 25°C
2 Rth(j – f) = 4.0°C/ W
100
7
5
3
3
2
2
10–1
7
5
10–1
7
5
3
3
2
2
10–2
7
5
10–2
7
5
3
2
10–3
3
2
10–3
10–52 3 5 710–42 3 5 710–3
TIME (s)
Feb.1999