BCR8PM Datasheet, PDF (5/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE

BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100120 140
JUNCTION TEMPERATURE (°C)
COMMUTATION CHARACTERISTICS
3 TYPICAL
2 _EXAMPLE
10^{2 Tj = 125°C}
7 ^{IT = 4A}
5 τ = 500µs
3 VD = 200V
2 _{f = 3Hz}
VOLTAGE WAVEFORM
t
(dv/dt)C VD
CURRENT WAVEFORM
IT
(di/dt)C
τ
t
10¹
7
I QUADRANT
5
3 _MINIMUM
2 _CHARAC-
10^{0 TERISTICS}
7 VALUE
5
III QUADRANT
10⁰ 2 3 5 7 10¹ 2 3 5 7 10² 2 3 5 7 10³
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A /ms)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω
6Ω
6V
A
6V
A
V
RG
V
RG
TEST PROCEDURE 1 TEST PROCEDURE 2
6Ω
6V
A
V
RG
TEST PROCEDURE 3
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR8PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
160
TYPICAL EXAMPLE
140
Tj = 125°C
120
100
80
60
III QUADRANT
40
20
I QUADRANT
0
10¹ 2 3 5 7 10² 2 3 5 7 10³ 2 3 5 7 10⁴
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
10³
TYPICAL EXAMPLE
7
5
IFGT I
4
3
IRGT I
2
IRGT III
10²
7
5
4
3
2
10¹_{100 2 3 4 5 7 101 2 3 4 5 7 102}
GATE CURRENT PULSE WIDTH (µs)
Feb.1999