BCR6AM Datasheet, PDF (5/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR6AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
160
TYPICAL EXAMPLE
140
Tj = 125°C
120
100
80
60
III QUADRANT
40
I QUADRANT
20
0
10¹ 2 3 5 7 10² 2 3 5 7 10³ 2 3 5 7 10⁴
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
10³
TYPICAL EXAMPLE
7
IFGT I
5
4
IRGT I
3
IRGT III
2
10²
7
5
4
3
2
10¹_{100 2 3 4 5 7 101 2 3 4 5 7 102}
GATE CURRENT PULSE WIDTH (µs)
COMMUTATION CHARACTERISTICS
10²
TYPICAL
7
EXAMPLE
5
4
TC = 125°C
3
IT = 4A
τ = 500µs
2
VD = 200V
f = 3Hz
10¹
7
5 ^MINIMUM
4 CHARAC-
I QUADRANT
3 TERISTICS
2 ^VALUE
III QUADRANT
10⁰
10⁰ 2 3 4 5 7 10¹ 2 3 4 5 7 10²
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω
6Ω
6V
A
6V
A
V
RG
V
RG
TEST PROCEDURE 1 TEST PROCEDURE 2
6Ω
6V
A
V
RG
TEST PROCEDURE 3
Feb.1999