BCR1AM-12 Datasheet, PDF (5/5 Pages) Mitsubishi Electric Semiconductor – LOW POWER USE GLASS PASSIVATION TYPE

COMMUTATION CHARACTERISTICS
10¹
7 ^{TYPICAL EXAMPLE}
5
4
3
TC = 125°C
IT = 1A
τ = 500µs
VD = 200V
2
MINIMUM ^{III QUADRANT}
10⁰
CHARAC-
TERISTICS
7
VALUE
5
4
3
I QUADRANT
2
10^–1
10^–1 2 3 4 5 7 10⁰ 2 3 4 5 7 10¹
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
GATE TRIGGER CHARACTERISTICS
TEST CIRCUITS
6Ω
6Ω
6V
A
6V
A
V
RG
V
RG
TEST PROCEDURE 1 TEST PROCEDURE 2
6Ω
6Ω
6V
A
6V
A
V
RG
V
RG
TEST PROCEDURE 3 TEST PROCEDURE 4
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR1AM-12
LOW POWER USE
GLASS PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
10³
7
TYPICAL EXAMPLE
5
4
3
2
10²
7
IFGT I
5
IFGT III
4
IRGT III
3
IRGT I
2
10¹
10⁰ 2 3 4 5 7 10¹ 2 3 4 5 7 10²
GATE CURRENT PULSE WIDTH (µs)
Feb.1999