TM200RZ-M Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER GENERAL USE INSULATED TYPE

MITSUBISHI THYRISTOR MODULES
TM200RZ/EZ/GZ-M,-H,-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
MAXIMUM AVERAGE POWER
DISSIPATION (SINGLE PHASE HALFWAVE)
320
280
θ
240 ^360°
180°
120°
RESISTIVE, INDUCTIVE
200
LOAD
PER SINGLE ELEMENT
90°
60°
160
θ=30°
120
80
40
0
0
40 80 120 160 200
AVERAGE CURRENT (A)
MAXIMUM AVERAGE
POWER DISSIPATION
(RECTANGULAR WAVE)
400
DC
350
θ
270°
300 360°
180°
RESISTIVE, INDUCTIVE
250
LOAD
120°
PER SINGLE
ELEMENT
90°
200
60°
θ=30°
150
100
50
0
0 40 80 120 160 200 240 280 320
AVERAGE CURRENT (A)
LIMITING VALUE OF THE AVERAGE
CURRENT (SINGLE PHASE HALFWAVE)
130
120
110
100
90
θ
360°
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE ELEMENT
80
70
60
θ=30° 60° 90° 120° 180°
50
0
40 80 120 160 200
AVERAGE CURRENT (A)
LIMITING VALUE OF THE AVERAGE
CURRENT (RECTANGULAR WAVE)
130
120
110
100
90
θ
360°
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE ELEMENT
80
70
60
50
40
θ=30° 60° 120°
270° DC
90° 180°
30
0 40 80 120 160 200 240 280 320
AVERAGE CURRENT (A)
Feb.1999