RD12MVS1_10 Datasheet, PDF (4/7 Pages) Mitsubishi Electric Semiconductor – RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Silicon RF Power Semiconductors
RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
TEST CIRCUIT (f=175MHz)
7HH
RF-in _NN
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TVCTUSBUF
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Copper board spring t=0.1mm


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INPUT / OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS
175MHz Zin* Zout*
Zo=50Ω
f=175MHz Zout*
f=175MHz Zin*
Vdd=7.2V, Idq=1.0A(Vgg adj.), Pin=1.0W
Zin*=0.965-j7.73
Zout*=1.73-j1.14
Zin*: Complex conjugate of input impedance
Zout*: Complex conjugate of output impedance
RD12MVS1
17 Aug 2010
4/7