RD00HVS1_10 Datasheet, PDF (4/7 Pages) Mitsubishi Electric Semiconductor – RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Silicon RF Power Semiconductors
RD00HVS1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
TEST CIRCUIT(f=175MHz)
Vgg
Vdd
C1
1 8 .0 m m
C2
1 8 .0 m m
1 0 uF ,5 0 V
4mm ^2mm
RF-in _180pF
4 .7 kO HM
19.5mm _{10.5mm 4.5mm 4mm}
L1
10pF
L2
18pF
270OHM
RD00HVS1
L4
5mm
4mm 6.5mm 20.5mm 15mm 4.0mm
L3 250pF ^RF-out
3pF
18pF
240pF
L1: Enameled wire 4Turns,D:0.43mm,2.46mmO.D
L 2 :L Q G 1 1 A 6 8 N(6 8 nH,m urata)
L3: Enameled wire 9Turns,D:0.43mm,2.46mmO.D
L4: Enameled wire 7Turns,D:0.43mm,2.46mmO.D
C1,C2:1000pF,0.022uF in parallel
Note:Board material-glass epoxi substrate
Micro strip line width=1.0mm/50 OHM,er:4.8,t=0.6mm
TEST CIRCUIT(f=520MHz)
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7EE
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RD00HVS1
17 Aug 2010
4/7