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RA13H8891MA_11 Datasheet, PDF (4/9 Pages) Mitsubishi Electric Semiconductor – RoHS Compliance , 889-915MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
<Silicon RF Power Modules >
RA13H8891MA
RoHS Compliance , 889-915MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
40
8
35 f=915MHz,
VGG=5V,
30 Pin=200mW
25
7
6
Pout
5
20
4
IDD
15
3
10
2
5
1
0
0
6
8
10
12
14
16
DRAIN VOLTAGE VDD(V)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
30
6
f=880MHz,
25
VDD=12.5V,
Pout
5
Pin=200mW
20
IDD
4
15
3
10
2
5
1
0
0
2 2.5 3 3.5 4 4.5 5 5.5 6
GATE VOLTAGE VGG(V)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
30
6
f=900MHz,
25
VDD=12.5V,
Pin=200mW
20
Pout
5
IDD
4
15
3
10
2
5
1
0
0
2 2.5 3 3.5 4 4.5 5 5.5 6
GATE VOLTAGE VGG(V)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
30
6
f=915MHz,
25
VDD=12.5V,
Pin=200mW
Pout
5
20
4
15
IDD
3
10
2
5
1
0
0
2 2.5 3 3.5 4 4.5 5 5.5 6
GATE VOLTAGE VGG(V)
Publication Date : Jul.2011
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