RA08H1317M_10 Datasheet, PDF (4/9 Pages) Mitsubishi Electric Semiconductor – 135-175MHz 8W 12.5V, 2 stage Amp. For PORTABLE RADIO

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Silicon RF Power Semiconductors
RoHS COMPLIANCE RA08H1317M
TYPICAL PERFORMANCE (Tcase=+25°C, Z G=ZL=50Ω, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
20
6
18 f=175MHz,
16
V_GG=3.5V,
5
14
P_in=20mW
4
12
10
3
8
6
P_out
2
4
2
I_DD
1
0
0
2
4
6
8
10 12
DRAIN VOLTAGE V_DD(V)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
16
4
14
f=135MHz,
V_DD=12.5V,
12
P_in=20mW
P_out
3
10
8
2
6
I_DD
4
1
2
0
0
1 1.5 2 2.5 3 3.5 4
GATE VOLTAGE V_GG(V)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
16
4
14
f=155MHz,
V_DD=12.5V,
12
P_in=20mW
P_out
3
10
8
2
6
I_DD
4
1
2
0
0
1 1.5 2 2.5 3 3.5 4
GATE VOLTAGE V_GG(V)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
16
4
14
f=175MHz,
V_DD=12.5V,
12
P_in=20mW
P_out
3
10
8
2
6
I_DD
4
1
2
0
0
1 1.5 2 2.5 3 3.5 4
GATE VOLTAGE V_GG(V)
RA08H1317M
4/9
30 Jun 2010