RA07H4047M-101 Datasheet, PDF (4/9 Pages) Mitsubishi Electric Semiconductor – Broadband Frequency Range

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Silicon RF Power Semiconductors
RoHS COMPLIANT RA07H4047M
TYPICAL PERFORMANCE (T_case=+25°C, Z_G=Z_L=50Ω, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
18
6
f=450M Hz ,
15
V_GG=3.5V,
P_in=20m W
5
12
4
9
P_out
3
6
2
3
I_DD
1
0
0
4
6
8
10
12
14
DRAIN VOLTAGE V_DD(V)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
18
6
f=470M Hz ,
15 ^VGG^=3.5V,
5
P_in=20m W
12
4
P_out
9
3
6
2
3
I_DD
1
0
0
4
6
8
10
12
14
DRAIN VOLTAGE V_DD(V)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
16
8
f=400M Hz ,
14
V_DD=12.5V,
12
P_in=20m W
P_out
7
6
10
5
8
4
6
3
I_DD
4
2
2
1
0
0
2
2.5
3
3.5
4
GATE VOLTAGE V_GG(V)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
16
8
14 ^f=430MHz,
V_DD=12.5V,
12 ^Pin^{=20m W}
7
P_out
6
10
5
8
4
6
3
I_DD
4
2
2
1
0
0
2
2.5
3
3.5
4
GATE VOLTAGE V_GG(V)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
16
8
f=450M Hz ,
14
V_DD=12.5V,
12
P_in=20m W
10
7
6
P_out
5
8
4
6
3
I_DD
4
2
2
1
0
0
2
2.5
3
3.5
4
GATE VOLTAGE V_GG (V)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
16
8
14 ^f=470MHz,
V_DD=12.5V,
12 ^Pin^{=20m W}
10
7
6
P_out
5
8
4
6
3
I_DD
4
2
2
1
0
0
2
2.5
3
3.5
4
GATE VOLTAGE V_GG (V)
RA07H4047M
4/9
28 Jun 2010