QM50TB-24 Datasheet, PDF (4/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER SWITCHING USE INSULATED TYPE

SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
3
ts
2
10 ¹
7
tf
5
4
3
2
VCC=600V
10 ⁰
IB1=1A
IC=50A
7
Tj=25°C
5
Tj=125°C
4
3
10^–1 2 3 4 5 7 10⁰
2 3 4 5 7 10¹
BASE REVERSE CURRENT –IB2 (A)
FORWARD BIAS SAFE OPERATING AREA
10 ²
7
5
3
DC
2
10 ¹
7
5 _TC=25°C
3 NON–REPETITIVE
2
200µS
50µS
100µS
10 ⁰
7
5
3
2
10 ^–1
10 ⁰ 2 3 4 5 7 10 ¹ 2 3 4 5 7 10 ² 2 3 4 5 7 10 ³
COLLECTOR-EMITTER VOLTAGE VCE (V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
10 ⁰ 2 3 45 710 ¹ 2 3 4 5 7
0.5
0.4
0.3
0.2
0.1
0
10 ^–3 2 3 4 5 710 ^–22 3 4 5 710 ^–1 2 3 4 5 7 10 ⁰
TIME (s)
MITSUBISHI TRANSISTOR MODULES
QM50TB-24
MEDIUM POWER SWITCHING USE
INSULATED TYPE
REVERSE BIAS SAFE OPERATING AREA
160
Tj=125°C
140
120
100
80
60
IB2=–1A
40
20
0
0 200 400 600 800 1000120014001600
COLLECTOR-EMITTER VOLTAGE VCE (V)
DERATING FACTOR OF F. B. S. O. A.
100
90
SECOND
BREAKDOWN
AREA
80
70
60
50
COLLECTOR
40
DISSIPATION
30
20
10
0
0 20 40 60 80 100 120 140 160
CASE TEMPERATURE TC (°C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
10 ²
7
5
4
3
2
Tj=25°C
10 ¹
Tj=125°C
7
5
4
3
2
10 ⁰
0.4 0.8 1.2 1.6 2.0 2.4
COLLECTOR-EMITTER REVERSE VOLTAGE
–VCEO (V)
Feb.1999