QM15TD-HB Datasheet, PDF (4/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER SWITCHING USE INSULATED TYPE

SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
10 ²
7
VCC=300V
5
4
IB1=90mA
IC=15A
3
Tj=25°C
Tj=125°C
2
ts
10 ¹
7
5
4
tf
3
2
10 ⁰
10 ^–2 2 3 4 5 710 ^–1 2 3 4 5 7 10⁰
BASE REVERSE CURRENT –IB2 (A)
FORWARD BIAS SAFE OPERATING AREA
10 ²
7
5
3
2
10 ¹
DC
7
5
100µs
3
2
10 ⁰
7
5
3
2
TC=25°C
NON-REPETITIVE
10 ^–1
10 ⁰ 2 3 4 5 710 ¹ 2 3 4 5 7 10 ² 2 3 4 5 7 10 ³
COLLECTOR-EMITTER VOLTAGE VCE (V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
10 ⁰ 2 3 4 5 710 ¹ 2 3 4 5
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10 ^–3 2 3 4 5 710 ^–2 2 3 4 5 710 ^–1 2 3 4 5 7 10 ⁰
TIME (s)
MITSUBISHI TRANSISTOR MODULES
QM15TD-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
REVERSE BIAS SAFE OPERATING AREA
32
28
IB2=–0.5A
24
IB2=–3.0A
20
16
12
8
4
Tj=125°C
0
0 100 200 300 400 500 600 700 800
COLLECTOR-EMITTER VOLTAGE VCE (V)
DERATING FACTOR OF F. B. S. O. A.
100
SECOND
90
BREAKDOWN
AREA
80
70
60
50
COLLECTOR
40
DISSIPATION
30
20
10
0
0 20 40 60 80 100 120 140 160
CASE TEMPERATURE TC (°C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
10 ^{2 CHARACTERISTICS) (TYPICAL)}
7
Tj=25°C
5
Tj=125°C
4
3
2
10 ¹
7
5
4
3
2
10 ⁰
0.4 0.8 1.2 1.6 2.0 2.4
COLLECTOR-EMITTER REVERSE VOLTAGE
–VCEO (V)
Feb.1999