QM150DY-3H Datasheet, PDF (4/5 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
3
2
ts
10 ¹
7
5
4
3
tf
2
10 ⁰
VCC=800V
IC=150A
7 IB1=3A
5
Tj=25°C
4
Tj=125°C
3
3 4 5 7 10⁰ 2 3 4 5 7 10¹
23
BASE REVERSE CURRENT –IB2 (A)
FORWARD BIAS SAFE OPERATING AREA
10 ³
7
5
3
2
10 ²
7
5
3
2
10 ¹
7
5
3
2
TC=25°C
10 ^{0 NON–REPETITIVE}
2 3 4 5 7 10 ¹ 2 3 4 5 7 10 ² 2 3 4 5 7 10 ³ 2
COLLECTOR-EMITTER VOLTAGE VCE (V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
10 ⁰ 2 3 4 5 710 ¹
0.10
0.08
0.06
0.04
0.02
0
10 ^–3 2 3 4 5 710 ^–2 2 3 4 5 710 ^–1 2 3 4 5 7 10 ⁰
TIME (s)
MITSUBISHI TRANSISTOR MODULES
QM150DY-3H
HIGH POWER SWITCHING USE
INSULATED TYPE
REVERSE BIAS SAFE OPERATING AREA
400
Tj=125°C
350
300
250
IB2=–3A
200
150
100
50
0
0 400 800 1200 1600 2000
COLLECTOR-EMITTER VOLTAGE VCE (V)
DERATING FACTOR OF F. B. S. O. A.
100
SECOND
90
BREAKDOWN
AREA
80
70
60
50
COLLECTOR
40
DISSIPATION
30
20
10
0
0 20 40 60 80 100 120 140 160
CASE TEMPERATURE TC (°C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
10 ^{3 CHARACTERISTICS) (TYPICAL)}
7
5
3
2
10 ²
7
5
3
2
10 ¹
7
5
3
Tj=25°C
2
Tj=125°C
10 ⁰
0
0.5
1
1.5
2
COLLECTOR-EMITTER REVERSE VOLTAGE
–VCEO (V)
Feb.1999